1 C2M0160120D silicon carbide power mosfet z -fe t tm mosfet n-channel enhancement mode features ? high speed switching with low capacitances ? high blocking voltage with low r ds(on) ? easy to parallel and simple to drive ? resistant to latch-up ? halogen free, rohs compliant benefts ? higher system effciency ? reduced cooling requirements ? increased system switching frequency applications ? auxiliary power supplies ? solar inverters ? high voltage dc/dc converters ? high-frequency applications package to-247-3 part number package C2M0160120D to-247-3 v ds 1200 v i d(max) @ 25?c 17.7 a r ds(on) 160 m ? maximum ratings (t c = 25 ?c unless otherwise specifed) symbol parameter value unit test conditions note i ds (dc) continuous drain current 17.7 a v gs @20 v, t c = 25?c fig. 19 11 v gs @20 v, t c = 100?c i ds (pulse) pulsed drain current 45 a pulse width t p = 50 s duty limited by t jmax, t c = 25?c v gs gate source voltage -10/+25 v p tot power dissipation 125 w t c =25?c fig. 20 t j , t stg operating junction and storage temperature -55 to +150 ?c t l solder temperature 260 ?c 1.6mm (0.063) from case for 10s m d mounting torque 1 8.8 nm lbf-in m3 or 6-32 screw C2M0160120D rev. -
2 electrical characteristics (t c = 25?c unless otherwise specifed) symbol parameter min. typ. max. unit test conditions note v (br)dss drain-source breakdown voltage 1200 v v gs = 0 v, i ds = 50 a v gs(th) gate threshold voltage 2.0 2.5 v v ds = 10v, i ds = 0.5 ma fig. 11 1.5 1.9 v v ds = 10v, i ds = 0.5 ma, t j = 150oc i dss zero gate voltage drain current 1 100 a v ds = 1200 v, v gs = 0 v 10 250 v ds = 1200 v, v gs = 0 v t j = 150oc i gss gate-source leakage current 0.25 a v gs = 20 v, v ds = 0 v r ds(on) drain-source on-state resistance 160 196 m ? v gs = 20 v, i d = 10 a fig. 4, 5, 6 290 400 v gs = 20 v, i d = 10a, t j = 150oc g fs transconductance 4.3 s v ds = 20 v, i ds = 10 a fig. 7 4.1 v ds = 20 v, i ds = 10 a, t j = 150oc c iss input capacitance 527 pf v gs = 0 v v ds = 800 v f = 1 mhz v ac = 25 mv fig. 16, 17 c oss output capacitance 47 c rss reverse transfer capacitance 4 e oss c oss stored energy 15 j fig. 18 t d(on)v turn-on delay time 7 ns v dd = 800 v, v gs = -5/20 v i d = 10 a r g(ext) = 0 , r l = 40 timing relative to v ds fig. 27 t fv fall time 7 t d(off)v turn-off delay time 13 t rv rise time 12 r g internal gate resistance 6.5 f = 1 mhz , v ac = 25 mv built-in sic body diode characteristics symbol parameter typ. max. unit test conditions note v sd diode forward voltage 3.1 v v gs = -5 v, i f = 5 a, t j = 25 oc fig 9, 10 2.9 v gs = -2 v, i f = 5 a, t j = 150 oc thermal characteristics symbol parameter typ. max. unit test conditions note r jc thermal resistance from junction to case 0.9 1.0 k/w fig. 21 r cs case to sink, w/ thermal compound 0.25 r ja thermal resistance from junction to ambient 40 gate charge characteristics symbol parameter typ. max. unit test conditions note q gs gate to source charge 6.9 nc v ds = 800 v, v gs = -5/20 v i d =10 a per jedec24 pg 27 fig. 12 q gd gate to drain charge 13.6 q g gate charge total 32.6 C2M0160120D rev. -
3 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 - 50 - 25 0 25 50 75 100 125 150 on resistance, r ds on (p.u.) junction temperature, t j ( c) conditions: i ds = 10 a v gs = 20 v t p < 200 s 0 5 10 15 20 25 30 0.0 2.5 5.0 7.5 10.0 drain - source current, i ds (a) drain - source voltage, v ds (v) conditions: t j = 150 c tp < 200 s v gs = 20 v v gs = 10 v v gs = 18 v v gs = 16 v v gs = 14 v v gs = 12 v 0 5 10 15 20 25 30 0.0 2.5 5.0 7.5 10.0 drain - source current, i ds (a) drain - source voltage, v ds (v) conditions: t j = - 55 c tp < 200 s v gs = 20 v v gs = 10 v v gs = 18 v v gs = 16 v v gs = 14 v v gs = 12 v 0 5 10 15 20 25 30 0.0 2.5 5.0 7.5 10.0 drain - source current, i ds (a) drain - source voltage, v ds (v) conditions: t j = 25 c tp < 200 s v gs = 20 v v gs = 10 v v gs = 18 v v gs = 16 v v gs = 14 v v gs = 12 v figure 2. typical output characteristics t j = 25 oc typical performance figure 6. typical on-resistance vs. temperature for various gate voltage figure 5. typical on-resistance vs. drain current for various temperatures figure 1. typical output characteristics t j = -55 oc figure 3. typical output characteristics t j = 150 oc 0 100 200 300 400 500 600 700 0 5 10 15 20 25 30 on resistance, r ds on (mohms) drain - source current, i ds (a) conditions: v gs = 20 v t p < 200 s t j = 150 c t j = - 55 c t j = 25 c 0 50 100 150 200 250 300 350 400 - 50 - 25 0 25 50 75 100 125 150 on resistance, r ds on (mohms) junction temperature, t j ( c) conditions: i ds = 10 a t p < 200 s v gs = 20 v v gs = 18 v v gs = 16 v v gs = 14 v figure 4. normalized on-resistance vs. temperature C2M0160120D rev. -
4 typical performance figure 8. typical body diode characteristic t j = -55 oc 0 5 10 15 20 0 2 4 6 8 10 12 14 drain - source current, i ds (a) gate - source voltage, v gs (v) conditions: v ds = 20 v tp < 200 s t j = 150 c t j = - 55 c t j = 25 c - 30 - 25 - 20 - 15 - 10 - 5 0 - 5 - 4 - 3 - 2 - 1 0 drain - source current, i ds (a) drain - source voltage, v ds (a) v gs = 0 v v gs = - 2 v v gs = - 5 v condition: t j = - 55 c t p < 50 s - 30 - 25 - 20 - 15 - 10 - 5 0 - 5 - 4 - 3 - 2 - 1 0 drain - source current, i ds (a) drain - source voltage, v ds (a) v gs = 0 v v gs = - 2 v v gs = - 5 v condition: t j = 25 c t p < 50 s - 30 - 25 - 20 - 15 - 10 - 5 0 - 5 - 4 - 3 - 2 - 1 0 drain - source current, i ds (a) drain - source voltage, v ds (a) v gs = 0 v v gs = - 2 v v gs = - 5 v condition: t j = 150 c t p < 50 s figure 7. typical transfer characteristic for various temperatures 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 - 50 - 25 0 25 50 75 100 125 150 threshold voltage, v th (v) junction temperature t j ( c) conditions v ds = 10 v i ds = 0.5 ma conditions v ds = 10 v i ds = 0.5 ma typ min - 5 0 5 10 15 20 25 0 5 10 15 20 25 30 35 gate - source voltage, v gs (v) gate charge, q g (nc) conditions: i ds = 10 a i gs = 1 ma v ds = 800 v t j = 25 c figure 9. typical body diode characteristic t j = 25 oc figure 10. typical body diode characteristic t j = 150 oc figure 11. typical and minimum threshold voltage vs. temperature figure 12. typical gate charge characteristic 25 oc C2M0160120D rev. -
5 1 10 100 1000 0 200 400 600 800 1000 capacitance (pf) drain - source voltage, v ds (v) c iss c oss conditions: t j = 25 c v ac = 25 mv f = 1 mhz c rss typical performance - 30 - 25 - 20 - 15 - 10 - 5 0 - 5 - 4 - 3 - 2 - 1 0 drain - source current, i ds (a) drain - source voltage, v ds (v) conditions: t j = - 55 c tp < 50 s v gs = 0 v v gs = 5 v v gs = 10 v v gs = 15 v v gs = 20 v - 30 - 25 - 20 - 15 - 10 - 5 0 - 5 - 4 - 3 - 2 - 1 0 drain - source current, i ds (a) drain - source voltage, v ds (v) conditions: t j = 25 c tp < 50 s v gs = 0 v v gs = 5 v v gs = 10 v v gs = 15 v v gs = 20 v - 30 - 25 - 20 - 15 - 10 - 5 0 - 5 - 4 - 3 - 2 - 1 0 drain - source current, i ds (a) drain - source voltage, v ds (v) conditions: t j = 150 c tp < 50 s v gs = 0 v v gs = 5 v v gs = 10 v v gs = 15 v v gs = 20 v 1 10 100 1000 0 50 100 150 200 capacitance (pf) drain - source voltage, v ds (v) c iss c oss conditions: t j = 25 c v ac = 25 mv f = 1 mhz c rss 0 5 10 15 20 25 30 0 200 400 600 800 1000 1200 stored energy, e oss (j) drain to source voltage, v ds (v) figure 18. stored energy c oss figure 16. typical typical capacitances vs. drain-source voltage (0 - 200v) figure 17. typical typical capacitances vs. drain-source voltage (0 - 1000v) figure 13. typical 3rd quadrant characteristic t j = -55 oc figure 14. typical 3rd quadrant characteristic t j = 25 oc figure 15. typical 3rd quadrant characteristic t j = 150 oc C2M0160120D rev. -
6 typical performance 0 2 4 6 8 10 12 14 16 18 20 - 55 - 5 45 95 145 drain - source continous current, i ds (dc) (a) case temperature, t c ( c) conditions: t j 150 c 0 20 40 60 80 100 120 140 - 55 - 5 45 95 145 maximum dissipated power, p tot (w) case temperature, t c ( c) conditions: t j 150 c 10e - 3 100e - 3 1 1e - 6 10e - 6 100e - 6 1e - 3 10e - 3 100e - 3 1 junction to case impedance, z thjc ( o c/w) time, t p (s) 0.5 0.3 0.1 0.05 0.02 0.01 singlepulse 0.01 0.10 1.00 10.00 0.1 1 10 100 1000 drain - source current, i ds (a) drain - source voltage, v ds (v) 100 s 1 ms 10 s conditions: t c = 25 c d = 0, parameter: t p 100 ms limited by r ds on figure 24. clamped inductie switching energy s. drain current (v ds = 600 v) figure 23. clamped inductie switching energy s. drain current (v ds = 800 v) figure 19. continuous current derating cure figure 20. continuous power derating figure 21. typical transient thermal impedance (junction - case) figure 22. safe operating area 0 100 200 300 400 500 600 700 800 900 0 5 10 15 20 25 30 35 switching energy (j) drain to source current, i ds (a) conditions: t j = 25 c v dd = 800 v r g(ext) = 6.8 ? v gs = - 5/+20 v fwd = c2d05120a l = 856 h e off e on e total 0 100 200 300 400 500 600 700 0 5 10 15 20 25 30 35 switching loss (j) drain to source current, i ds (a) e off e on e total conditions: t j = 25 c v dd = 600 v r g(ext) = 6.8 ? v gs = - 5/+20 v fwd = c2d05120a l = 856 h C2M0160120D rev. -
7 typical performance 0 50 100 150 200 250 300 0 5 10 15 20 25 30 switching loss (j) external gate resistor rg(ext) (ohms) e off e on e total conditions: t j = 25 c v dd = 800 v i ds = 10 a v gs = - 5/+20 v fwd = c2d05120a l = 856 h 0 20 40 60 80 100 120 140 160 180 200 - 55 - 5 45 95 145 swithcing loss (j) junction temperature, t j ( c) conditions: i ds = 10 a v dd = 800 v r g(ext) = 6.8 ? v gs = - 5/+20 v fwd = c2d05120a l = 856 h e off e on e total 0 5 10 15 20 25 30 35 0 5 10 15 20 25 time (ns) external gate resistor, r g(ext) (ohms) conditions: t j = 25 c v dd = 800 v r l = 80 ? v gs = - 5/+20 v t d (off) v t d (on) v t f v t r v figure 25. clamped inductive switching energy vs. r g(ext) figure 26. clamped inductive switching energy vs. junction temperature figure 27. resistive switching times vs. external gate resistor (v dd = 800v, i d = 10a) figure 28. resistive switching time description C2M0160120D rev. -
8 clamped inductive switch testing fixture and waveforms figure 29. clamped inductive switching waveform test circuit c = 42.3 f v = 800 v d.u.t. c2m0080120d c4d10120d 10a, 1200v sic schottky l = 856 h dut sic schottky diode esd ratings esd test total devices sampled resulting classifcation esd-hbm all devices passed 1000v 2 (>2000v) esd-mm all devices passed 400v c (>400v) esd-cdm all devices passed 1000v iv (>1000v) C2M0160120D rev. -
9 9 package dimensions package to-247-3 recommended solder pad layout to-247-3 (1) (2) (3) pos inches millimeters min max min max a .190 .205 4.83 5.21 a1 .090 .100 2.29 2.54 a2 .075 .085 1.91 2.16 b .042 .052 1.07 1.33 b1 .075 .095 1.91 2.41 b2 .075 .085 1.91 2.16 b3 .113 .133 2.87 3.38 b4 .113 .123 2.87 3.13 c .022 .027 0.55 0.68 d .819 .831 20.80 21.10 d1 .640 .695 16.25 17.65 d2 .037 .049 0.95 1.25 e .620 .635 15.75 16.13 e1 .516 .557 13.10 14.15 e2 .145 .201 3.68 5.10 e3 .039 .075 1.00 1.90 e4 .487 .529 12.38 13.43 e .214 bsc 5.44 bsc n 3 3 l .780 .800 19.81 20.32 l1 .161 .173 4.10 4.40 ?p .138 .144 3.51 3.65 q .216 .236 5.49 6.00 s .238 .248 6.04 6.30 part number package marking C2M0160120D to-247-3 c2m0160120 this product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defbrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffc control systems, or weapons systems. copyright ? 2013 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks and z-rec and z-fet are trademarks of cree, inc. C2M0160120D rev. - cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5451 www.cree.com/power
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